semihow rev.a0,march 2012 mck100 - 8 features ? repetitive peak off - state voltage: 600v ? r.m.s on ? state current (i t(rms) = 1a) ? low gate trigger current: 200ua applications leakage detector, electronic ballast or protection circuit. general description semihow?s scr product is a single directional pnpn device, has a low gate trigger current and high stability in gate trigger current to temperature, generally suitable for sensing and detection circuits . mck100 -8 silicon controlled rectifier v drm = 600 v i t(rms) = 1 a i tsm = 11 a i gt = 200ua symbol absolute maximum ratings (t j =25 unless otherwise specified ) symbol parameter conditions ratings unit v drm repetitive peak off - state voltage sine wave, 50/60hz, gate open 600 v v rrm repetitive peak reverse voltage 600 v i t(av) average on - state current full sine wave, t c = 80.4 o c 0.64 a i t(rms) r.m.s. on - state current 1 a i tsm surge on - state current ? cycle, 50hz/60hz, sine wave, non repetitive 10/11 a i 2 t fusing current t = 10ms 0.5 a 2 s p gm forward peak g ate power dissipation t j = 125 c, pulse width 1.0us 2 w p g(av) forward average gate power dissipation t j = 125 c, t = 8.3ms 0.1 w i fgm forward peak gate current t j = 125 c, pulse width 1.0us 1 a v rgm reverse peak gate voltage t j = 125 c, pulse width 1.0us 5 v t j operating junction temperature - 40~+125 o c t stg storage temperature - 40~+150 o c sot - 89 k a g
semihow rev.a0,march 2012 mck100 - 8 thermal characteristics electrical characteristics (t c =25 unless otherwise specified ) notes : 1. pulse width 1.0ms, duty cycle 1% symbol parameter conditions min typ max unit i drm repetitive peak off - state current v d = v drm t c =25 o c - - 50 ua t c =125 o c - - 5 ma i rrm repetitive peak reverse current v d = v drm t c =25 o c - - 50 ua t c =125 o c - - 5 ma i gt gate trigger current v d = 12v, r l =330 ? - - 200 ua v gt gate trigger voltage v d = 12v, r l =330 ? - - 1.0 v v gd non - trigger gate voltage 1 v d = 12v, r l =330 ? , t j =125 o c 0.2 - - v v tm peak on - state voltage i t = 1.4a, i g = 5ma - 1.2 1.6 v dv/ dt critical rate of rise of off - state voltage v d = 2/3 v drm , t j =125 o c 10 - - v/us i h holding current i t = 0.2a - - 2 ma symbol parameter conditions min typ max unit r jc thermal resistance junction to case 56 o c /w r ja thermal resistance junction to ambient 150 o c /w
semihow rev.a0,march 2012 mck100 - 8 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 junction temperature, t j [ o c] x 100(%) v gt (t o c) v gt (25 o c) 1 10 100 0 2 4 6 8 10 12 50hz 60hz surge on state current, i tsm [a] time [cycles] 1 10 100 1000 0.1 1 10 25[ o c] p g(av) (0.1w) p gm (2w) v gd gate voltage, v g [v] gate current, i g [ma] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 70 80 90 100 110 120 130 180 o 150 o 120 o 90 o 60 o 30 o maximum allowable case temperature, t c [ o c] average on state current, i t(av) [a] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.0 0.2 0.4 0.6 0.8 1.0 180 o 150 o 120 o 90 o 60 o 30 o power dissipation, p d [w] average on-state current, it (av) [a] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 x 100(%) i gt (t o c) i gt (25 o c) junction temperature, t j [ o c] typical characteristics fig 1. average current vs. power dissipation fig 2. average current vs. case temperature fig 3. gate power characteristics fig 4. surge on state current rating (non - repetitive) fig 5. gate trigger current vs. junction temperature fig 6. gate trigger voltage vs. junction temperature
semihow rev.a0,march 2012 mck100 - 8 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 0.1 1 10 125 o c instantaneous on state current, i t [a] instantaneous on state voltage, v t [v] 25 o c 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 thermal impedance [ o c/w] pulse time [sec] typical characteristics fig 7. instantaneous on state current vs. instantaneous on state voltage fig 8. thermal impedance vs. pulse time measurement of gate trigger current note. whole parameter and test condition can not be over absolute maximum ratings in this datasheet. r s =0.167 ? v to =1.05v r g r l v d v g
semihow rev.a0,march 2012 mck100 - 8 package dimension sot - 89 - 3l
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